SYNERGETIC EFFECT OF Sn3+ ON STRUCTURAL, OPTICAL AND DIELECTRIC PROPERTIES OF ZnO NANOSTRUCTURES
By
Anil Kaushik
Department of Physics, G.C.W. Gohana, Sonepat-131301, Haryana, India
Email: gphysics07@gmail.com
(Received: April 29, 2022; In format: May 06, 2022; Accepted: October 10, 2022)
DOI: https://doi.org/10.58250/jnanabha.2022.52213
Abstract
This work shows the impact of Sn3+ ion doping on structural, optical and dielectric properties of ZnO synthesized via co-precipitation technique. The synthesized samples were examined using XRD (X-ray Diffractometer), FeSEM (Field Emission Scanning Electron Microscope), FTIR (Fourier Transform Infrared Spectroscopy), PL (Photoluminescence) and Impedance Spectroscopy. The XRD patterns confirmed the hexagonal structure with P63mc space group and the crystalline sizes, strain and volume of cell are 37.4 nm, 2.5968Å and 59.85Å3 . The morphological micrographs were recorded via S EM. The photoluminescence spectra were measured using a photoluminescence spectrometer with a 325 nm excitation wavelength. FTIR (Fourier Transform Infrared Spectrometer) spectrometer was used to measure IR spectra in the range 500 − 3600 cm-1 . Complex impedance spectroscopy of the Sn3+ /ZnO − 400 samples was performed at 310 K using a galvenostat in the frequency range of 5MHz to 50 Hz at applied voltage of 50mV. The grain edge resistance of the Sn3+ /ZnO − 400 sample is 14.57MΩ (at 310 K).
2020 Mathematical Sciences Classification: 00A79, 78-05, 78A45.
Keywords and Phrases: Sn3+, Zinc Oxide, SEM, Photoluminescence, FTIR, Complex Impedance